electron mobility造句
例句与造句
- After this interview , i learned about electron mobility
通过这次访问，我了解到电子迁移。 - High electron mobility transistor hemt
高速电子迁移率晶体管 - Electron mobility detector
电子适移率检测器 - I - v testing of a single transistor has been carried out . the p - si film is prepared by ela , and electron mobility is calculated about 30cm2 / v
对用激光晶化法制备的多晶硅薄膜所制备的p - si - tft单管进行了-测试，计算电子迁移率为约30cm ~ 2 v - Due to the good performance of gaas devices of high frequency , high electron mobility and low noise , the high frequency devices are mostly made of gaas materials now
由于gaas器件优良的高频、高电子迁移率、低噪声性能，所以现在高频器件一般都选用gaas材料。 - It's difficult to find electron mobility in a sentence. 用electron mobility造句挺难的
- Finally , the electron mobility in 6h - sic inversion layers is studied by single - particle monte carlo technique . the simulation results fit the experimental data very well
对6h sic反型层迁移率进行的moniecaro模拟结果表明，库仑中心的相关性，库仑电荷量及电荷中心和sic侣。 - Based on gan hemt device physics and experiment results , we found electron mobility is depend on sheet density of 2deg and proposed a new gan hemt current collapse physical model
基于ganhemt器件物理和实验分析测试结果,发现电子迁移率与二维电子气浓度有关,并提出了一种gan电流崩塌效应的新物理模型。 - This model described relationship of current collapse and traps in buffer layer , and the normalized product of electron mobility and 2deg density with and without current collapses was 0 . 95 vgs
该模型描述了电流崩塌效应与缓冲层中陷阱的相互关系,并获得了电流崩塌前后迁移率与二维电子气浓度乘积的归一化值0 . 95 vgs 。 - Mgf plays the role of segregation . the third method is to enhance the oel by means of making complex with n - vi compounds . el - vi compounds are very stable and possessing higher electron mobility than organic materials
但电子不是在真空中，而是在固体中加速的，我们称它为固态阴极射线发光或类阴极射线发光，它的激发态是成对的电子及空穴。 - Although electrons do not move quite as easily in polysilicon as they do in the single - crystal kind , research has produced 3 - d transistors with 90 to 95 percent of the electron mobility seen in their 2 - d counterparts
虽然电子在多晶矽中移动不如在单晶矽中那麽容易，但在这项研究做出来的三维电晶体里，电子的移动速率已达同类二维晶片的90 ~ 95 % 。 - It is a good candidate for the high quality photoelectronic and microelectronic devices , such as fiber optical communication lasers , photoelectronic detectors , high electron mobility transistors and electro - optic modulators
它是制备性能优良的光电子与微电子器件，如光纤通讯激光器、光电探测器、高电子迁移率晶体管、电光调制器等的主要选择对象之一。 - From which we can draw a conclusion that the hole mobility can experience a 15 % improvement in the strained sige layer while the electron mobility can experience a 48 . 5 % improvement in the strained si layer
通过比较实验我们可以获知,应变si材料中的电子迁移率相比于体si材料最大可有48 . 5 %的提高，而应变sige材料中的空穴迁移率相比于体si材料可有近15 %的提高。 - Firstly , a new interface roughness scattering model is developed using exponential autocovariance functions . the simulation results show that the electron mobility calculated using the exponential model are in good agreement with the experiment data
先推导了一种sic反型层表面粗糙散射的指数模型，研究证明应用此模型能够更精确地研究sicmos沟道载流子的输运规律。 - Featured by wide band gap , high breakage electric field , high electron mobility , low dielectric constant , strong irradiation proof and excellent chemical stability , silicon carbide ( sic ) , viewed as one of the most promising wide band gap semiconductors , is widely utilized in optoelectronic devices , high frequency and large power , high temperature electronic devices
被誉为最有潜力的宽禁带半导体材料一sic ，因其具有禁带宽度大、击穿电场高、热导率大、电子饱和漂移速度高、介电常数小、抗辐射能力强、良好的化学稳定性等优异的特性，被广泛地应用于光电器件、高频大功率、高温电子器件。 - As the only one among nearly 200 polytypes of different crystalline sic , which has a cubic crystalline structure , p - sic is an excellent candidate for fabrication of high power devices because of its high values of saturated electron drift velocity and electron mobility in comparison with the other sic polytypes
碳化硅是碳化硅近200种不同结晶形态中唯一的纯立方结构晶体，载流子迁移率高，电子饱和漂移速度大，更适合于制造电子器件特别是电力电子器件之用。
更多例句： 下一页